- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | IGBT Modules IGBT-MODULES 600V | IGBT Silicon Modules | Econo 2 | + 150 C | Tray | 250 W | Hex | 600 V | 1.9 V | 75 A | 400 nA | ||||
|
|
Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack2B | + 150 C | 250 W | Bridge | 650 V | 1.35 V | 75 A | 100 nA | |||||
|
|
Infineon Technologies | IGBT Modules IGBT Module 75A 650V | IGBT Silicon Modules | + 150 C | 250 W | 650 V | 1.95 V | 75 A | 400 nA | |||||||
|
|
|
Infineon Technologies | IGBT Modules IGBT Module 75A 650V | IGBT Silicon Modules | Module | + 150 C | 250 W | IGBT-Inverter | 650 V | 1.55 V | 75 A | 400 nA | |||||
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 250 W | Full Bridge | 1.2 kV | 2.05 V | 75 A | 120 nA | |||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 250 W | Dual | 1.2 kV | 2.05 V | 75 A | 120 nA |