- Package / Case :
- Maximum Operating Temperature :
- Configuration :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-1 | + 150 C | 312 W | Single | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 312 W | Dual | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP1-12 | + 100 C | 312 W | Single | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 312 W | Dual | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 312 W | Full Bridge | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 312 W | Single | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 312 W | Dual | 1.7 kV | 2 V | 75 A | 400 nA | ||||
|
|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 312 W | Single | 1.7 kV | 2 V | 75 A | 400 nA |