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- Maximum Operating Temperature :
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- Collector- Emitter Voltage VCEO Max :
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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 521 W | 1.2 kV | 2.5 V | 120 A | 100 nA | |||||
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IXYS | IGBT Modules IGBT Module H Bridge | E3-Pack | + 125 C | Bulk | 390 W | Half Bridge | 1.2 kV | 1.8 V | 120 A | 500 nA | |||||
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IXYS | IGBT Modules Six Pack SPT IGBT | E3-Pack | + 125 C | Bulk | 390 W | 1.2 kV | 1.2 kV | 120 A | 500 nA | ||||||
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IXYS | IGBT Modules Six-Pack XPT IGBT | E2-Pack | + 125 C | Bulk | 390 W | Six-Pack | 1.2 kV | 1.8 V | 120 A | 500 nA | |||||
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IXYS | IGBT Modules Six-Pack SPT IGBT | E3-Pack | + 125 C | Bulk | 390 W | Six-Pack | 1.2 kV | 1.8 V | 120 A | 500 nA | |||||
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IXYS | IGBT Modules Boost/Brake Module XPT IGBT | V1-A-Pack | + 125 C | Bulk | 390 W | Single | 1.2 kV | 1.9 V | 120 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 416 W | 600 V | 2.1 V | 120 A | 150 nA |