- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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IXYS | IGBT Modules 300 Amps 1200V | IGBT Silicon Modules | Y3-DCB-5 | + 150 C | Bulk | 1.38 kW | Single | 1.2 kV | 1.2 kV | 330 A | 800 nA | ||||
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Infineon Technologies | IGBT Modules 3300V 200A DUAL | IHM 73X140-8 | + 125 C | 2.2 kW | Dual | 3300 V | 3.4 V | 330 A | 400 nA | ||||||
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IXYS | IGBT Modules 300 Amps 1200V | IGBT Silicon Modules | Y3-DCB | + 150 C | Bulk | Single | 1200 V | 330 A | |||||||
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Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.316 kW | Half Bridge | 1.2 kV | 3.1 V | 330 A | 400 nA |