- Manufacture :
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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules N-CH 1.2KV 370A | IGBT Silicon Modules | 62 mm | + 125 C | Single | 1200 V | 370 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.2KV 370A | IGBT Silicon Modules | Econo D | + 125 C | Dual | 1200 V | 370 A | |||||||
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Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA | ||||
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Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.562 kW | 1.2 kV | 2.07 V | 370 A | 400 nA | |||||||
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Infineon Technologies | IGBT Modules 1200V 200A SINGLE | IGBT Silicon Modules | 62 mm | + 125 C | 1450 W | Single Dual Emitter | 1200 V | 2.1 V | 370 A | 400 nA |