- Pd - Power Dissipation :
- Configuration :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Full Bridge | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP4 | + 100 C | 935 W | Dual | 600 V | 1.5 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA | |||||
|
Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA |