- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Full Bridge | 600 V | 1.4 V | 430 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Dual | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | Full Bridge | 1.7 kV | 2 V | 150 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Full Bridge | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 890 W | Single | 1.2 kV | 1.7 V | 280 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1 kW | Full Bridge | 650 V | 1.85 V | 385 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Dual | 600 V | 1.4 V | 430 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | Dual | 1.7 kV | 2 V | 150 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 560 W | 1.7 kV | 2 V | 150 A | 500 nA | ||||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP6 | + 100 C | 1.15 kW | Single | 600 V | 1.4 V | 430 A | 500 nA |