- Manufacture :
- Package / Case :
- Configuration :
- Collector-Emitter Saturation Voltage :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 543 W | 1.2 kV | 3.3 V | 128 A | 100 nA | |||||
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | EasyPack1B | + 150 C | 275 W | 3-Phase | 1.2 kV | 1.45 V | 45 A | 100 nA | |||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 543 W | 1.2 kV | 3.3 V | 128 A | 100 nA | |||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 521 W | 1.2 kV | 2.5 V | 120 A | 100 nA | |||||
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IXYS | IGBT Modules GenX3 1200V IGBTs | TO-268 | + 150 C | Tube | 300 W | Single | 1.2 kV | 1.2 kV | 75 A | 100 nA | |||||
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IXYS | IGBT Modules High Frequency Range >40khz CIGBT w/Diode | SOT-227 B-4 | + 150 C | Tube | 460 W | 1.2 kV | 1.2 kV | 95 A | 100 nA | ||||||
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IXYS | IGBT Modules 40khz PT IGBTs Power Device | TO-263 | + 150 C | Tube | 250 W | Single | 1.2 kV | 1.2 kV | 48 A | 100 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-3 | + 150 C | 312 W | Dual | 1.2 kV | 3.2 V | 70 A | 100 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 150 C | 312 W | Asymmetrical Bridge | 1.2 kV | 3.2 V | 70 A | 100 nA |