- Manufacture :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules IGBT 1200V 150A | IGBT Silicon Modules | Module | + 150 C | Bulk | 790 W | Dual | 1200 V | 1.75 V | 150 A | 100 nA | ||||
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Infineon Technologies | IGBT Modules IGBT 1200V 50A | IGBT Silicon Modules | Module | + 150 C | 335 W | IGBT-Inverter | 1200 V | 1.85 V | 83 A | 100 nA | |||||
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | Module | + 150 C | 160 W | 3-Phase | 1200 V | 1.85 V | 25 A | 100 nA | |||||
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Infineon Technologies | IGBT Modules IGBT Module 300A 650V | IGBT Silicon Modules | Module | + 150 C | 1100 W | Dual | 650 V | 1.55 V | 390 A | 100 nA | |||||
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Infineon Technologies | IGBT Modules IGBT Module 25A 1200V | IGBT Silicon Modules | Module | + 150 C | 160 W | Dual Modules | 1200 V | 1.85 V | 100 nA | ||||||
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IXYS | IGBT Modules 1700V/85A High Voltage XPT IGBT | IGBT Silicon Modules | Module | + 175 C | Tube | 680 W | Single Dual Emitter | 1700 V | 3 V | 88 A | 100 nA |