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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 543 W | 1.2 kV | 3.3 V | 128 A | 100 nA | ||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Modules | SOT-227-4 | + 150 C | Bulk | 543 W | 1.2 kV | 3.3 V | 128 A | 100 nA |