- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Continuous Collector Current at 25 C :
- Applied Filters :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.15KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 1150 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.6KA | IGBT Silicon Modules | IHM130 | + 125 C | Single Dual Collector Dual Emitter | 1700 V | 1600 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.3KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual | 1700 V | 2300 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 950A | IGBT Silicon Modules | IHM130 | + 125 C | Single Dual Collector Dual Emitter | 1700 V | 950 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.7KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 1700 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.95KA | IGBT Silicon Modules | IHM130 | + 125 C | 9.6 kW | Dual Common Emitter Common Gate | 1700 V | 2.6 V | 1950 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 900A | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 900 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 3.2KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual | 1700 V | 3200 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.2KV 1.2KA | IGBT Silicon Modules | IHM130 | + 125 C | 7.6 kW | Dual | 1200 V | 3.7 V | 1200 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1600V 1200A SINGLE | IGBT Silicon Modules | IHM130 | + 125 C | 7.8 kW | Dual | 1600 V | 3.5 V | 1200 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules 1200V 800A DUAL | IGBT Silicon Modules | IHM130 | + 125 C | 3.9 kW | Dual | 1200 V | 1.7 V | 1200 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 950A | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 950 A | |||||||
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Infineon Technologies | IGBT Modules 3.3KV 1.2KA | IHM130 | + 125 C | Dual Parallel | ||||||||||
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Infineon Technologies | IGBT Modules 1.7KV 600A | IHM130 | + 125 C | Dual Parallel | ||||||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.2KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual Dual Collector Dual Emitter | 1700 V | 1200 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.2KA | IGBT Silicon Modules | IHM130 | + 125 C | Single Dual Collector Dual Emitter | 1700 V | 1200 A | |||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.4KA | IGBT Silicon Modules | IHM130 | + 125 C | Dual | 1700 V | 2400 A | |||||||
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Infineon Technologies | IGBT Modules 3300V 400A F/DIODE | IHM130 | + 125 C | 800 kW | Dual Parallel | |||||||||
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Infineon Technologies | IGBT Modules 3300V 1200A F/DIODE | IHM130 | + 125 C | Dual Parallel |