- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules 600V 200A DUAL | IGBT Silicon Modules | + 125 C | 445 W | Dual | 600 V | 1.95 V | 230 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 600V 100A DUAL | IGBT Silicon Modules | + 125 C | 445 W | Dual | 600 V | 1.95 V | 130 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 600V 50A DUAL | IGBT Silicon Modules | + 125 C | 280 W | Dual | 600 V | 2.2 V | 75 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 600V 150A DUAL | IGBT Silicon Modules | + 125 C | 730 W | Dual | 600 V | 1.95 V | 180 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 600V 75A DUAL | IGBT Silicon Modules | + 125 C | 355 W | Dual | 600 V | 2.2 V | 100 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 110A | IGBT Silicon Modules | + 150 C | Dual | 1700 V | 110 A | |||||||||
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Infineon Technologies | IGBT Modules 1200V 100A DUAL | IGBT Silicon Modules | + 125 C | Tray | 835 W | Dual | 1200 V | 2.1 V | 205 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 1200V 50A DUAL | IGBT Silicon Modules | + 125 C | 460 W | Dual | 1200 V | 2.4 V | 115 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 1200V 100A CHOPPER | IGBT Silicon Modules | + 125 C | 830 W | Single | 1200 V | 2.1 V | 205 A | 400 nA | ||||||
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Infineon Technologies | IGBT Modules 1200V 75A DUAL | IGBT Silicon Modules | + 125 C | Tray | 690 W | Dual | 1200 V | 2.4 V | 170 A | 400 nA |