- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Continuous Collector Current at 25 C :
- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules N-CH 1.7KV 1.3KA | IGBT Silicon Modules | IHM | + 125 C | 6.25 W | Dual | 1700 V | 2.6 V | 1300 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 2.6KA | IGBT Silicon Modules | IHM | + 125 C | Bulk | 12.5 kW | Dual Common Emitter Common Gate | 1700 V | 2.6 V | 2600 A | 400 nA | ||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 975A | IGBT Silicon Modules | IHM | + 125 C | 4.8 kW | Dual | 1700 V | 2.6 V | 975 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 1200V 800A DUAL | IGBT Silicon Modules | IHM | + 125 C | 5 kW | Dual | 1200 V | 2.7 V | 800 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 3300V 800A SINGLE | IGBT Silicon Modules | IHM | + 125 C | 9.6 kW | Single | 3300 V | 3.4 V | 1300 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules 3300V 400A DUAL | IGBT Silicon Modules | IHM | + 125 C | 4.8 kW | Dual | 3300 V | 3.4 V | 660 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules N-CH 1.7KV 650A | IGBT Silicon Modules | IHM | + 125 C | 3.1 kW | Dual | 1700 V | 2.6 V | 650 A | 400 nA |