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0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules IGBT Module 150A 1700V | IGBT Silicon Modules | + 150 C | 750 W | 1200 V | 2.1 V | 150 A | 100 nA | |||||||
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IXYS | IGBT Modules 650V/234A Trench IGBT GenX4 XPT | IGBT Silicon Modules | SOT-227B-4 | + 175 C | Tube | 750 W | Single Dual Emitter | 650 V | 1.98 V | 210 A | 100 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP2-18 | + 100 C | 750 W | Dual | 1.2 kV | 1.8 V | 220 A | 200 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Single | 600 V | 1.5 V | 290 A | 400 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Dual | 600 V | 1.5 V | 290 A | 400 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 100 C | 750 W | Single | 600 V | 1.5 V | 290 A | 400 nA |