- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules HYBRID PACK1 | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules N-CH 1.2KV 225A | IGBT Silicon Modules | Econo D | + 125 C | 1250 W | Dual | 1200 V | 3.7 V | 225 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules IGBT Module 200A 1700V | IGBT Silicon Modules | 62 mm | + 150 C | 1250 W | Dual | 1700 V | 2.45 V | 310 A | 100 nA | |||||
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Infineon Technologies | IGBT Modules | IGBT Silicon Modules | HybridPack1 | + 150 C | 1250 W | 3-Phase | 650 V | 1.7 V | 500 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules IGBT Module 400A 650V | IGBT Silicon Modules | Module | + 150 C | 1250 W | IGBT-Inverter | 650 V | 1.55 V | 485 A | 400 nA | |||||
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Infineon Technologies | IGBT Modules HYBRID PACK2 | IGBT Silicon Modules | HybridPack2 | + 150 C | 1250 W | 3-Phase | 650 V | 1.4 V | 530 A | 400 nA | |||||
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Littelfuse | IGBT Modules 1700V 200A IGBT | IGBT Silicon Modules | Package D | + 125 C | Bulk | 1250 W | Half Bridge | 1700 V | 2 V | 300 A | 400 nA |