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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Single | 1.7 kV | 2 V | 400 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Single | 1.7 kV | 2 V | 400 A | 400 nA | ||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | D3-11 | + 125 C | 1.47 kW | Dual | 1.7 kV | 2 V | 400 A | 400 nA |