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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 175 C | 536 W | 600 V | 1.5 V | 220 A | 600 nA | ||||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Carbide Modules | TO-264-3 | + 175 C | 536 W | Single | 600 V | 1.45 V | 220 A | 600 nA | |||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Modules | SOT-227-4 | + 175 C | Tray | 536 W | 600 V | 1.5 V | 220 A | 600 nA | |||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq ... | IGBT Silicon Carbide Modules | TO-247-3 | + 175 C | 536 W | Single | 600 V | 1.45 V | 220 A | 600 nA |