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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-247-3 | + 150 C | 962 W | Single | 1.2 kV | 3.5 V | 170 A | +/- 250 nA | ||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Silicon Modules | TO-264-3 | + 150 C | 962 W | Single | 1.2 kV | 3.5 V | 170 A | +/- 250 nA |