- Configuration :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Infineon Technologies | IGBT Modules IGBT 1200V 25A | IGBT Silicon Modules | Module | + 150 C | 160 W | 3-Phase | 1200 V | 1.85 V | 25 A | 100 nA | ||||
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Infineon Technologies | IGBT Modules IGBT Module 25A 1200V | IGBT Silicon Modules | Module | + 150 C | 160 W | Dual Modules | 1200 V | 1.85 V | 100 nA |