- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Applied Filters :
36 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.389 kW | 1.2 kV | 1.87 V | 300 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - SOT-227 IGBT | SOT-227-4 | + 150 C | Tube | 862 W | Single | 1.2 kV | 3.3 V | 149 A | +/- 250 nA | ||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.042 kW | Half Bridge | 600 V | 1.9 V | 260 A | 400 nA | ||||||||
|
Vishay | IGBT Modules 108 Amp 600 Volt Half-Bridge | IGBT Silicon Modules | + 150 C | Bulk | Dual | 600 V | 108 A | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 3.125 kW | Single | 1.2 kV | 1.9 V | 910 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.042 kW | 1.2 kV | 2.17 V | 341 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.645 kW | 1.2 kV | 2 V | 500 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 500 W | Half Bridge | 1.2 kV | 3.2 V | 105 A | 400 nA | ||||||||
|
Vishay | IGBT Modules 138 Amp 600 Volt Half-Bridge | IGBT Silicon Modules | + 150 C | Bulk | Dual | 600 V | 138 A | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 543 W | Half Bridge | 1.2 kV | 1.9 V | 150 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.5 kW | Single | 1.2 kV | 1.9 V | 620 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.562 kW | 1.2 kV | 2.07 V | 370 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.562 kW | 1.2 kV | 1.8 V | 420 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.136 kW | Half Bridge | 1.2 kV | 3.1 V | 200 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.841 kW | Single | 1.2 kV | 3.1 V | 550 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 650 W | Half Bridge | 1.2 kV | 1.8 V | 200 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.147 kW | Half Bridge | 1.2 kV | 3.1 V | 280 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 658 W | 1.2 kV | 1.8 V | 200 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.604 kW | Half Bridge | 1.2 kV | 1.9 V | 800 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 833 W | 1.2 kV | 1.9 V | 200 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.645 kW | 1.2 kV | 2 V | 500 A | 400 nA | |||||||||
|
Vishay | IGBT Modules 209 Amp 600 Volt Half-Bridge | IGBT Silicon Modules | + 150 C | Bulk | Dual | 600 V | 209 A | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 446 W | Half Bridge | 1.2 kV | 1.75 V | 100 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.645 kW | Half Bridge | 1.2 kV | 2 V | 500 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - MTP SWITCH-e3 | MTP | + 150 C | 403 W | Full Bridge | 600 V | 2.14 V | 107 A | +/- 200 nA | |||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.66 kW | Half Bridge | 1.2 kV | 3.1 V | 660 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 1.136 kW | Half Bridge | 600 V | 1.24 V | 530 A | +/- 200 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 446 W | 1.2 kV | 1.7 V | 100 A | 400 nA | |||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.119 kW | Half Bridge | 1.2 kV | 3.1 V | 530 A | 400 nA | ||||||||
|
Vishay | IGBT Modules Output & SW Modules - DIAP IGBT | + 150 C | 2.5 kW | Single | 1.2 kV | 1.9 V | 650 A | 400 nA |