- Manufacture :
- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | |
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Modules | SOT-227-4 | + 150 C | 830 W | 1.2 kV | 3.2 V | 170 A | 900 nA | ||||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - NPT Med Frequency... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | Bulk | 570 W | Single | 1.2 kV | 3.2 V | 123 A | 600 nA | ||||
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Microsemi | IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 -... | IGBT Silicon Carbide Modules | ISOTOP-4 | + 150 C | 284 W | Single | 900 V | 3.2 V | 64 A | +/- 100 nA | |||||
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Vishay | IGBT Modules Output & SW Modules - IAP IGBT | + 150 C | 500 W | Half Bridge | 1.2 kV | 3.2 V | 105 A | 400 nA | |||||||
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Infineon Technologies | IGBT Modules 1200V 35A DUAL | IGBT Silicon Modules | Half Bridge1 | + 150 C | 280 W | Half Bridge | 1200 V | 3.2 V | 50 A | 150 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP-3 | + 150 C | 312 W | Dual | 1.2 kV | 3.2 V | 70 A | 100 nA | |||||
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Microsemi | IGBT Modules Power Module - IGBT | IGBT Silicon Modules | SP3-32 | + 150 C | 312 W | Asymmetrical Bridge | 1.2 kV | 3.2 V | 70 A | 100 nA |