- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors N-Channel IGBT NPT Series 1200V | SMD/SMT | TO-263AB-3 | + 150 C | Reel | 298 W | Single | 1200 V | 2.7 V | 35 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | Through Hole | TO-3PN | + 175 C | Tube | 300 W | 1100 V | 2.7 V | 50 A | 500 nA | 25 V | ||||||
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Fairchild Semiconductor | IGBT Transistors 600V 15A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 178 W | Single | 600 V | 2.7 V | 30 A | +/- 10 uA | +/- 20 V |