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Package / Case :
Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGP15N60UNDF
Per Unit
$2.5400
RFQ
Fairchild Semiconductor IGBT Transistors 600V 15A NPT IGBT Through Hole TO-220-3 + 150 C Tube 178 W Single 600 V 2.7 V 30 A +/- 10 uA +/- 20 V
IKW15N120H3
Per Unit
$4.6600
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 217 W Single 1200 V 2.7 V 30 A 600 nA 20 V
IGW15N120H3
Per Unit
$3.8400
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 150 C Tube 217 W   1200 V 2.7 V 30 A 600 nA +/- 20 V
Default Photo
Per Unit
$4.6600
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 217 W Single 1200 V 2.7 V 30 A 600 nA 20 V
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