- Mounting Style :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors N-Channel IGBT NPT Series 1200V | SMD/SMT | TO-263AB-3 | + 150 C | Reel | 298 W | Single | 1200 V | 2.7 V | 35 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V 15A NPT IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 178 W | Single | 600 V | 2.7 V | 30 A | +/- 10 uA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220-3 | Tube | 100 W | Single | 600 V | 2.7 V | 23 A | +/- 20 V | |||||||
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IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 3 kV | 2.7 V | 50 A | +/- 100 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-25 KHZ COPACK IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.7 V | 28 A | 100 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 217 W | 1200 V | 2.7 V | 30 A | 600 nA | +/- 20 V | ||||||
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-220-3 | Tube | 100 W | Single | 600 V | 2.7 V | 28 A | +/- 20 V | |||||||
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-247-3 | Tube | 100 W | Single | 600 V | 2.7 V | 23 A | +/- 20 V | |||||||
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-247-3 | Tube | 100 W | Single | 600 V | 2.7 V | 28 A | +/- 20 V | |||||||
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IXYS | IGBT Transistors | Through Hole | ISOPLUS-i4-3 | + 150 C | Tube | 150 W | Single | 3 kV | 2.7 V | 34 A | +/- 20 V | ||||||
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IXYS | IGBT Transistors 900V 60A 2.7V XPT IGBT GenX3 | Through Hole | TO-247-3 | + 175 C | Tube | Single | 900 V | 2.7 V | 140 A | 100 nA | +/- 20 V | ||||||
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IXYS | IGBT Transistors 20 Amps 1700 V 4 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 110 W | Single | 1.7 kV | 2.7 V | 20 A | 100 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors 900V 24A 2.7V XPT IGBTs GenX3 w/ Diode | Through Hole | TO-247-3 | + 150 C | Tube | Single | 900 V | 2.7 V | 44 A | 100 nA | +/- 20 V | ||||||
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors 32 Amps 1700 V 3.5 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1.7 kV | 2.7 V | 32 A | 100 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-220FP-3 | Tube | 45 W | Single | 600 V | 2.7 V | 17 A | +/- 20 V | |||||||
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STMicroelectronics | IGBT Transistors PowerMESH TM IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | 80 W | Single | 600 V | 2.7 V | 100 nA | +/- 20 V | ||||||
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IXYS | IGBT Transistors 26 Amps 1700V 3.5 V Rds | Through Hole | ISOPLUS i4-Pak-3 | + 150 C | Tube | 200 W | Single | 1.7 kV | 2.7 V | 44 A | 100 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors 16 Amps 1000V 2.7 Rds | SMD/SMT | TO-263-3 | + 150 C | Tube | Single | 1000 V | 2.7 V | +/- 20 V | ||||||||
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IXYS | IGBT Transistors 32 Amps 900V 2.7 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 900 V | 2.7 V | +/- 20 V | ||||||||
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IXYS | IGBT Transistors 50 Amps 900V 2.7 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | Single | 900 V | 2.7 V | +/- 20 V | ||||||||
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Infineon / IR | IGBT Transistors 1200V UltraFast 8-40kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 1.2 kV | 2.7 V | 99 A | +/- 20 V |