- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
21 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gte FieldStop IGBT 650V 80A | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 40A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 650V 60A Trench Gate Field-Stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
|
STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gate H series 650V 80A HiSpd | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | 20 V | |||||
|
STMicroelectronics | IGBT Transistors 600V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
|
STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
|
STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | 20 V |