- Mounting Style :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
42 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon / IR | IGBT Transistors 600V FAST 1-8 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 1.6 V | 70 A | +/- 20 V | ||||||
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | SMD/SMT | DPAK-3 | + 175 C | Reel | 68 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 100 A | +/- 400 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | Through Hole | TO-220FP-3 | + 175 C | 23 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | ||||||
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 80 A | +/- 400 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 650V Field Stop Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 882 W | Single | 650 V | 1.6 V | 240 A | +/- 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 375 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 650 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK-3 | + 175 C | Reel | 283 W | Single | 650 V | 1.6 V | 80 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 650V FS3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 455 W | Single | 650 V | 1.6 V | 150 A | +/- 400 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 60A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 375 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 246 W | Single | 600 V | 1.6 V | 67 A | 100 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 FP | + 175 C | Tube | 30 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | SMD/SMT | D2PAK | + 175 C | Reel | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 283 W | Single | 600 V | 1.6 V | 80 A | 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors FS3 TIGBT Excellent switching performan | Through Hole | TO-247-4 | + 175 C | Tube | 455 W | Single | 650 V | 1.6 V | 150 A | 400 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 200 W | Single | 600 V | 1.6 V | 70 A | +/- 20 V | |||||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 319.2 W | Single | 600 V | 1.6 V | 80 A | 100 nA | +/- 20 V | |||||
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Infineon / IR | IGBT Transistors 600V DC-1kHz | Through Hole | TO-247-3 | Tube | 100 W | Single | 600 V | 1.6 V | 34 A | +/- 20 V | |||||||
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STMicroelectronics | IGBT Transistors Trench gate H series 600V 15A HiSpd | Through Hole | TO-220-3 | + 175 C | Tube | 115 W | Single | 600 V | 1.6 V | 30 A | 250 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors Trench gate H series 650V 80A HiSpd | Through Hole | TO-3P | + 175 C | Tube | 469 W | Single | 650 V | 1.6 V | 120 A | 250 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 200 W | Single | 600 V | 1.6 V | 53 A | 100 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 246 W | Single | 600 V | 1.6 V | 67 A | 100 nA | +/- 20 V | |||||
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Infineon / IR | IGBT Transistors 600V DC-1kHz | Through Hole | TO-220FP-3 | Tube | 45 W | Single | 600 V | 1.6 V | 23.5 A | +/- 20 V | |||||||
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 7 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 55 W | Single | 600 V | 1.6 V | 15 A | +/- 100 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors 60 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 200 W | Single | 600 V | 1.6 V | 65 A | 200 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 200 W | Single | 600 V | 1.6 V | 53 A | 100 nA | +/- 20 V | |||||
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ON Semiconductor | IGBT Transistors 650V/30A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.6 V | 60 A | 100 nA | +/- 20 V |