2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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ROHM Semiconductor | IGBT Transistors 650V 30A IGBT Stop Trench | Through Hole | + 175 C | Tube | 194 W | 650 V | 1.6 V | 58 A | +/- 200 nA | +/- 30 V | ||||
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ROHM Semiconductor | IGBT Transistors 650V 30A IGBT Stop Trench | Through Hole | + 175 C | Tube | 194 W | 650 V | 1.6 V | 58 A | +/- 200 nA | +/- 30 V |