- Package / Case :
- Maximum Operating Temperature :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors EcoSPARK2-450V Ignition IGBT | SMD/SMT | TO-252AA-3 | + 175 C | Reel | 150 W | Single | 450 V | 1.64 V | 23 A | +/- 10 V | |||||
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Fairchild Semiconductor | IGBT Transistors EcoSpark2 450V Ignition IGBT | SMD/SMT | TO-263AB-3 | + 175 C | Reel | 150 W | Single | 450 V | 1.64 V | 23 A | +/- 10 V | |||||
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | ||||
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Infineon Technologies | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... | SMD/SMT | D-PAK-3 | Tube | 100 W | Single | 600 V | 1.95 V | 23 A | +/- 20 V | ||||||
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Infineon Technologies | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... | SMD/SMT | D-PAK-3 | + 150 C | Reel | 100 W | Single | 600 V | 2.52 V | 23 A | +/- 100 nA | +/- 20 V | ||||
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Infineon / IR | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | SMD/SMT | TO-263-3 | + 175 C | Tube | 99 W | Single | 600 V | 2 V | 23 A | 100 nA | +/- 20 V | ||||
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Infineon / IR | IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE... | SMD/SMT | D-PAK-3 | + 150 C | Reel | 100 W | Single | 600 V | 2.52 V | 23 A | +/- 100 nA | +/- 20 V |