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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.52 V | 99 A | 100 nA | +/- 20 V | ||||
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Infineon / IR | IGBT Transistors 1200V UltraFast 8-40kHz | Through Hole | TO-274AA-3 | Tube | 350 W | Single | 1.2 kV | 2.7 V | 99 A | +/- 20 V |