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Maximum Operating Temperature :
Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
NGTB25N120FL3WG
Per Unit
$4.6600
RFQ
ON Semiconductor IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ Through Hole TO247-3 + 175 C Tube 349 W Single 1.2 kV 1.7 V 100 A 200 nA +/- 20 V
NGTB75N60SWG
Per Unit
$6.1900
RFQ
ON Semiconductor IGBT Transistors FSII 75A 600V Welding Through Hole TO-247-3 + 175 C Tube 595 W Single 600 V 1.7 V 100 A 200 nA +/- 20 V
IRG8P60N120KD-EPBF
Per Unit
$10.8700
RFQ
Infineon / IR IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
IRG8P60N120KDPBF
Per Unit
$11.7700
RFQ
Infineon / IR IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
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