- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ON Semiconductor | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | |||||
|
ON Semiconductor | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | |||||
|
Infineon / IR | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V | |||||
|
Infineon / IR | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 420 W | Single | 1200 V | 1.7 V | 100 A | 400 nA | 30 V |