Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG8P60N120KD-EPBF
Per Unit
$10.8700
RFQ
Infineon / IR IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AD-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
IRG8P60N120KDPBF
Per Unit
$11.7700
RFQ
Infineon / IR IGBT Transistors 1200V IGBT GEN8 Through Hole TO-247AC-3 + 150 C Tube 420 W Single 1200 V 1.7 V 100 A 400 nA 30 V
Page 1 / 1