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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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IXYS | IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V | ||||
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IXYS | IGBT Transistors 650V/290A Trench IGBT GenX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V |