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3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IGW25N120H3
Per Unit
$4.8500
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 326 W Single 1200 V 2.7 V 50 A 600 mA 20 V
Default Photo
Per Unit
$4.8500
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 326 W Single 1200 V 2.7 V 50 A 600 mA 20 V
Default Photo
Per Unit
$4.8500
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 326 W Single 1200 V 2.7 V 50 A 600 mA 20 V
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