- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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ON Semiconductor | IGBT Transistors IGBT 1200V 40A FS3 LOW VF | Through Hole | TO-247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 2.3 V | 160 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 650V/60A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 650 V | 1.64 V | 100 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 650V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 650 V | 2.1 V | 80 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 2 V | 80 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 600V/60A IGBT LPT TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 2.6 V | 120 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 25A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 385 W | Single | 1.2 kV | 2 V | 50 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 341 W | Single | 1.2 kV | 2.2 V | 40 A | 100 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 40A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 535 W | Single | 1.2 kV | 2 V | 80 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 650V/30A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 1.6 V | 60 A | 100 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 100 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 600V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors LC IH RC OSV | Through Hole | TO-247-3 | + 175 C | Tube | 278 W | Single | 1.2 kV | 2.1 V | 30 A | 100 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 650V/35A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 600 V | 1.85 V | 80 A | 200 nA | 20 V | ||||
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ON Semiconductor | IGBT Transistors 650V/35A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 650 V | 2.2 V | 70 A | 200 nA | +/- 20 V | ||||
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ON Semiconductor | IGBT Transistors 1350V/30A IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 394 W | Single | 1.35 kV | 2.6 V | 60 A | 100 nA | +/- 25 V | ||||
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ON Semiconductor | IGBT Transistors 600V/30A IGBT FSI TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 189 W | Single | 600 V | 2.6 V | 60 A | 100 nA | 20 V |