- Manufacture :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
41 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 5.7 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 429 W | Single | 1200 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V 75A 100nA | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 5.7 V | |||||
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC | Through Hole | TO-247-3 | + 175 C | Tube | 125 W | 600 V | 1.9 V | 40 A | 100 nA | 20 V | ||||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 305 W | Single | 650 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC | Through Hole | TO-247-3 | + 175 C | Tube | 134 W | 600 V | 1.9 V | 50 A | 100 nA | 20 V | ||||||
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 150 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 255 W | Single | 650 V | 1.9 V | 74 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 305 W | Single | 650 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon / IR | IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC | Through Hole | TO-247-3 | + 175 C | Tube | 134 W | 600 V | 1.9 V | 50 A | 70 uA | 20 V | ||||||
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 75A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 600 V | 1.9 V | 150 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 250 W | Single | 650 V | 1.9 V | 74 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 1.9 V | 45 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 429 W | Single | 1200 V | 1.9 V | 80 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1350 V | 1.9 V | 40 A | 100 nA | 5.8 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 600V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 1.9 V | 45 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT TrnchStp w/Soft Fast recovery | Through Hole | TO-247-3 | + 175 C | Tube | 187 W | Single | 600 V | 1.9 V | 45 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1200 V | 1.9 V | 60 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-247-3 | + 175 C | 250 W | Single | 650 V | 1.9 V | 74 A | 100 nA | 20 V | ||||||
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Infineon Technologies | IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP... | Through Hole | TO-247-3 | + 175 C | 305 W | Single | 650 V | 1.9 V | 80 A | 100 nA | 20 V | ||||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 600V 50A | Through Hole | TO-247-3 | + 175 C | Tube | 333 W | Single | 600 V | 1.9 V | 90 A | 100 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 250 W | Single | 650 V | 1.9 V | 74 A | 100 nA | 20 V | |||||
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 543 W | Single | 650 V | 1.9 V | 118 A | 250 nA | 30 V | ||||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1350 V | 1.9 V | 40 A | 100 nA | 5.8 V | |||||
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS TrenchStop RC | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 1200 V | 1.9 V | 60 A | 100 nA | 20 V |