- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors N-Ch/ 60A 600V FS IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 1.8 V | 120 A | +/- 400 nA | +/- 20 V | |||||
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STMicroelectronics | IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop | Through Hole | TO-247-3 | + 175 C | Tube | 167 W | Single | 600 V | 1.8 V | 40 A | 250 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1200 V | 1.8 V | 40 A | 100 nA | 20 V | |||||
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IXYS | IGBT Transistors 75 Amps 600V 1.05 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 1.8 V | 100 nA | +/- 20 V | ||||||
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Infineon Technologies | IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech | Through Hole | TO-247-3 | + 175 C | Tube | 412 W | Single | 1000 V | 1.8 V | 60 A | 600 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 310 W | Single | 1200 V | 1.8 V | 40 A | 100 nA | 20 V | |||||
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | |||||
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IXYS | IGBT Transistors N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | + 150 C | Tube | 325 W | Single | 1200 V | 1.8 V | 78 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1200 V | 1.8 V | 58 A | 500 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech | Through Hole | TO-247-3 | + 175 C | Tube | 412 W | Single | 1000 V | 1.8 V | 60 A | 600 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V | |||||
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Fairchild Semiconductor | IGBT Transistors N-ch / 40A 650V IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 650 V | 1.8 V | 80 A | +/- 400 nA | +/- 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 85 W | Single | 1200 V | 1.8 V | 20 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors XPT IGBT Copack | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 1200 V | 1.8 V | 38 A | 500 nA | 20 V | |||||
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IXYS | IGBT Transistors 650V/170A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 750 W | Single | 650 V | 1.8 V | 170 A | 100 nA | 30 V | |||||
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ON Semiconductor | IGBT Transistors FSII 50A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 1.8 V | 100 A | 200 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 600 V | 1.8 V | 40 A | +/- 100 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V IGBT UFS N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 165 W | Single | 600 V | 1.8 V | 20 A | +/- 100 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 463 W | Single | 600 V | 1.8 V | 75 A | +/- 250 nA | +/- 20 V | |||||
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Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 463 W | Single | 600 V | 1.8 V | 75 A | +/- 250 nA | +/- 20 V | |||||
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 520 W | Single | 600 V | 1.8 V | 90 A | +/- 20 V | |||||||
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Infineon Technologies | IGBT Transistors 600V Fast 1-8kHz | Through Hole | TO-247-3 | Tube | 100 W | Single | 600 V | 1.8 V | 31 A | +/- 20 V | |||||||
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Infineon Technologies | IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body | Through Hole | TO-247-3 | + 175 C | Tube | 254 W | Single | 1200 V | 1.8 V | 30 A | 100 nA | 6.4 V | |||||
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IXYS | IGBT Transistors G-SERIES GENX3SIC IGBT 600V 48A | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 600 V | 1.8 V | 75 A | 100 nA | +/- 20 V | ||||||
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STMicroelectronics | IGBT Transistors 600V 40A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 283 W | Single | 650 V | 1.8 V | 80 A | 250 nA | 20 V | |||||
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 900V 30A | Through Hole | TO-247-3 | + 175 C | Tube | 428 W | Single | 900 V | 1.8 V | 60 A | 600 nA | 20 V |