IGBT Transistors - Star River Electronics

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3 products

PART NO.	PRICE	QUANTITY		MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXBX25N250	Per Unit $32.2300	Send RFQ	PDF RFQ	IXYS	IGBT Transistors	Through Hole	TO-247-3	+ 150 C		300 W	Single	2.5 kV	3.3 V	55 A	+/- 100 nA	+/- 20 V
APT25GP120BDQ1G	Per Unit $12.7800	Send RFQ	PDF RFQ	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C		417 W	Single	1.2 kV	3.3 V	69 A	100 nA	30 V
APT45GP120BG	Per Unit $19.7800	Send RFQ	PDF RFQ	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-247-3	+ 150 C	Tube	625 W	Single	1.2 kV	3.3 V	100 A	100 nA	30 V