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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | Tube | 180 W | 1.2 kV | 2.2 V | 50 A | |||||||||
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | |||||
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Infineon Technologies | IGBT Transistors Fast IGBT 300V 40A Ultra | Through Hole | TO-247-3 | Tube | 180 W | Single | 300 V | 1.7 V | 70 A | +/- 20 V | |||||||
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 2.3 V | 40 A | 100 nA | +/- 20 V |