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Collector-Emitter Saturation Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IKW75N60H3FKSA1
Per Unit
$6.9300
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
IKW75N60TFKSA1
Per Unit
$7.3100
RFQ
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IKW75N60TA
Per Unit
$9.4000
RFQ
Infineon Technologies IGBT Transistors 600V 75A 100nA Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IKW75N60T
Per Unit
$7.3100
RFQ
Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
IKW75N60H3
Per Unit
$5.1800
RFQ
Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 2.25 V 80 A 100 nA 5.7 V
Default Photo
Per Unit
$7.0400
RFQ
Infineon Technologies IGBT Transistors 600V 75A 100nA Through Hole TO-247-3 + 175 C Tube 428 W Single 600 V 1.9 V 80 A 100 nA 5.7 V
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