- Manufacture :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Fairchild Semiconductor | IGBT Transistors 1500V 30A FS SA Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 500 W | Single | 1.5 kV | 2.15 V | 60 A | +/- 500 nA | +/- 25 V | |||||
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 500 W | Single | 1.2 kV | 2.5 V | 88 A | 250 nA | 30 V | ||||||
|
IXYS | IGBT Transistors 1200V XPT GenX3 IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 500 W | Single | 1200 V | 3.7 V | 75 A | 100 nA | 30 V |