- Manufacture :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IXYS | IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | 600 V | 1.55 V | 120 A | 100 nA | +/- 20 V | ||||||
|
IXYS | IGBT Transistors 650V/130A XPTI C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 650 V | 1.74 V | 130 A | 100 nA | 30 V | |||||
|
IXYS | IGBT Transistors 650V/130A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 650 V | 1.74 V | 130 A | 100 nA | 30 V | |||||
|
IXYS | IGBT Transistors GenX3 900V XPT IGBTs | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 900 V | 2.2 V | 105 A | 100 nA | 30 V | |||||
|
Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT Gen 2 | Through Hole | TO-247-3 | + 175 C | Tube | 600 W | Single | 600 V | 2.14 V | 120 A | 400 nA | +/- 20 V |