- Pd - Power Dissipation :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 4 A l... | Through Hole | TO-220FP-3 | + 175 C | 23 W | Single | 650 V | 1.6 V | 8 A | +/- 250 uA | +/- 20 V | ||||
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A l... | Through Hole | TO-220FP-3 | + 175 C | 31 W | Single | 650 V | 1.55 V | 30 A | + / - 250 uA | +/- 20 V | ||||
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STMicroelectronics | IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A l... | Through Hole | TO-220FP-3 | + 175 C | 32.6 W | Single | 650 V | 1.55 V | 40 A | 250 uA | +/- 20 V |