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2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 187 W | 600 V | 2.4 V | 60 A | 100 nA | 20 V | ||||
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Infineon Technologies | IGBT Transistors 600V HI SPEED SW IGBT | Through Hole | PG-TO-247-3 | Tube | 170 W | 600 V | 2.4 V | 40 A | 100 nA | 20 V |