- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXYS | IGBT Transistors N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | + 150 C | Tube | 325 W | Single | 1200 V | 1.8 V | 78 A | 500 nA | 20 V | ||||
|
|
Infineon / IR | IGBT Transistors 650V Lo VCEon Trench Co-Pack IGBT | Through Hole | TO-247AC-3 | + 175 C | Tube | 325 W | Single | 650 V | 1.7 V | 90 A | 100 nA | 20 V | ||||
|
|
|
Infineon / IR | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247AD-3 | + 175 C | Tube | 325 W | Single | 650 V | 1.7 V | 90 A | +/- 100 nA | +/- 20 V |