- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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STMicroelectronics | IGBT Transistors 1250V 20A trench gte field-stop IGBT | Through Hole | TO-3P | + 175 C | Tube | 259 W | Single | 1.25 kV | 2.55 V | 40 A | 250 nA | 20 V | ||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 259 W | Single | 1.2 kV | 1.55 V | 30 A | 250 nA | +/- 20 V | ||||
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STMicroelectronics | IGBT Transistors 1250V 20A trench gate field-stop IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 259 W | Single | 1.25 kV | 2.55 V | 40 A | 250 nA | 20 V | ||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | + 175 C | 259 W | Single | 1200 V | 2.5 V | 30 A | +/- 250 nA | 20 V | ||||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 259 W | Single | 1200 V | 2.1 V | 30 A | 250 nA | 20 V | ||||
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 259 W | Single | 1200 V | 2.1 V | 30 A | 250 nA | 20 V |