- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Operating Supply Voltage :
46 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of I/Os | Operating Supply Voltage | |
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.2 V | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 55 C | + 125 C | Reverse Breakdown Voltage | Min Supply Voltage | |||||
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Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 55 C | + 125 C | Reverse Breakdown Voltage | Min Supply Voltage | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 55 C | + 125 C | Reverse Breakdown Voltage | Min Supply Voltage | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | 0 C | + 70 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.5 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 40 C | + 85 C | Reverse Breakdown Voltage | 1.2 V | |||||
|
Microsemi | FPGA - Field Programmable Gate Array ProASIC3 | SMD/SMT | EEPROM Memory Size | - 55 C | + 125 C | Reverse Breakdown Voltage | Min Supply Voltage |