- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Memory Size :
- Organization :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Operating Supply Voltage | Memory Size | Maximum Clock Frequency | Interface Type | Organization | Supply Current - Max | Data Retention | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,727
In-stock
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Microchip Technology | EEPROM 4kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Reel | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 4kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | ||||
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3,869
In-stock
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Microchip Technology | EEPROM 512x8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 512x8 - 5V | Through Hole | PDIP-8 | 0 C | + 70 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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4,177
In-stock
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Microchip Technology | EEPROM 1kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | |||
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7,533
In-stock
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Microchip Technology | EEPROM 512x8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Reel | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 2kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 16 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 2 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 512x8 - 5V | Through Hole | PDIP-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 1kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 2kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 16 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 2 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 4kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 4kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 2kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 16 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 2 k x 8 | 5 mA | 200 Year | ||||
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5,518
In-stock
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Microchip Technology | EEPROM 4kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 512x8 - 5V | Through Hole | PDIP-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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3,344
In-stock
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Microchip Technology | EEPROM 1kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Reel | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 512x8 - 5V Rot Pin | SMD/SMT | TSSOP-8 | - 40 C | + 85 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 512x8 - 5V Rot Pin | SMD/SMT | TSSOP-8 | 0 C | + 70 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 1kx8 - 5V | Through Hole | PDIP-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 512x8 - 5V Rot Pin | SMD/SMT | TSSOP-8 | - 40 C | + 125 C | Tube | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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7,789
In-stock
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Microchip Technology | EEPROM 512x8 - 5V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Reel | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | |||
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4,843
In-stock
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Microchip Technology | EEPROM 512x8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 512x8 - 5V Rot Pin | SMD/SMT | TSSOP-8 | - 40 C | + 85 C | Reel | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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7,286
In-stock
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Microchip Technology | EEPROM 1kx8 - 5V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Reel | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 512x8 - 5V Rot Pin | SMD/SMT | TSSOP-8 | 0 C | + 70 C | Reel | 4.5 V, 5.5 V | 4 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 512 x 8 | 5 mA | 200 Year | ||||
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3,494
In-stock
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Microchip Technology | EEPROM 4kx8 - 5V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Reel | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year | |||
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6,615
In-stock
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Microchip Technology | EEPROM 1kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 4.5 V, 5.5 V | 8 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 1 k x 8 | 5 mA | 200 Year | |||
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Microchip Technology | EEPROM 2kx8 - 5V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Reel | 4.5 V, 5.5 V | 16 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 2 k x 8 | 5 mA | 200 Year | ||||
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Microchip Technology | EEPROM 2kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Reel | 4.5 V, 5.5 V | 16 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 2 k x 8 | 5 mA | 200 Year | ||||
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2,024
In-stock
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Microchip Technology | EEPROM 4kx8 - 5V | SMD/SMT | SOIC-8 | - 40 C | + 125 C | Reel | 4.5 V, 5.5 V | 32 kbit | 3 MHz | Serial, 4-Wire, SDI, SPI | 4 k x 8 | 5 mA | 200 Year |