- Packaging :
- Mounting Type :
- Voltage - Supply :
- Supplier Device Package :
- Channel Type :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
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IXYS Integrated Circuits Division | 14A 5 LEAD TO-263 INVERTING | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||||||
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IXYS Integrated Circuits Division | 14A 5 PIN TO-220 INVERTING | TO-220-5 Formed Leads | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||||||
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5,645
In-stock
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IXYS Integrated Circuits Division | 14A 8LEAD SOIC EXP MTL INVERTING | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | |||||
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4,184
In-stock
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IXYS Integrated Circuits Division | 14A 8LEAD SOIC EXP MTL INVERTING | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV TO220-5 | TO-220-5 | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-220-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||||||
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4,083
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||||
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5,671
In-stock
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IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | |||||
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4,306
In-stock
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IXYS Integrated Circuits Division | 2A 8 SOIC EXP METAL DUAL INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||||
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IXYS Integrated Circuits Division | 2A 8 SOIC EXP METAL DUAL INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||||
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2,296
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | |||||
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5,535
In-stock
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IXYS Integrated Circuits Division | IC MOSFET DRIVER 3A SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 30 V | 8-SOIC | 0 | 2000 | Independent | Low-Side | N-Channel, P-Channel MOSFET | 0.8V, 3V | 3A, 3A | 18ns, 18ns | ||||
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||||||
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IXYS Integrated Circuits Division | 2A 8 SOIC DUAL INVERTING | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||||
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IXYS Integrated Circuits Division | 2A 8 DFN DUAL INVERTING | 8-VDFN Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DFN-EP (5x4) | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | |||||
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3,039
In-stock
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IXYS Integrated Circuits Division | IC MOSFET DRIVER 3A SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 30 V | 8-SOIC | 0 | Independent | Low-Side | N-Channel, P-Channel MOSFET | 0.8V, 3V | 3A, 3A | 18ns, 18ns | |||||
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6,549
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Inverting | Through Hole | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-DIP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 9A DUAL HS TO263-5 | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | TO-263-5 | 0 | Single | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||||||
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7,259
In-stock
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-SO | 8-SOIC (0.154", 3.90mm Width) | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns |