- Part Status :
- Voltage - Supply :
- Channel Type :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
- Rise / Fall Time (Typ) :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 9 V ~ 20 V | 8-PDIP | 0 | 3000 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | |||||
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Infineon Technologies | IC DVR HALF BRIDGE 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | 3000 | Synchronous | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | |||||
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Infineon Technologies | IC DVR HALF BRIDGE 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | 3000 | Synchronous | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | |||||
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Infineon Technologies | IC DRIVER MOSFET/IGBT 1CH 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Single | High-Side | IGBT, N-Channel MOSFET | 6V, 9.5V | 290mA, 600mA | 600V | 75ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Synchronous | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200V | 70ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HIGH/LOW SIDE 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Independent | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HI/LO SIDE 200V 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Not For New Designs | 10 V ~ 20 V | 8-PDIP | 0 | Independent | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 200V | 70ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HI/LO SIDE 600V 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Independent | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 70ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HALF-BRIDGE 600V 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Independent | Half-Bridge | IGBT, N-Channel MOSFET | 0.7V, 2.3V | 290mA, 600mA | 600V | 70ns, 35ns | ||||||
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Infineon Technologies | IC DRIVER HALF-BRIDGE 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Synchronous | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 70ns, 35ns | ||||||
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Infineon Technologies | IC DVR CURR SENSE 1CH 600V 8DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 12 V ~ 20 V | 8-PDIP | 0 | Single | High-Side | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 80ns, 40ns | ||||||
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Infineon Technologies | IC DRIVER HALF-BRIDGE 600V 8-DIP | 8-DIP (0.300", 7.62mm) | - | Tube | Non-Inverting | Through Hole | -40°C ~ 150°C (TJ) | Active | 10 V ~ 20 V | 8-PDIP | 0 | Independent | Half-Bridge | IGBT, N-Channel MOSFET | 0.8V, 2.5V | 290mA, 600mA | 600V | 100ns, 35ns |