- Packaging :
- Input Type :
- Part Status :
- Voltage - Supply :
- Driven Configuration :
- Logic Voltage - VIL, VIH :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Input Type | Number of Drivers | Mounting Type | Operating Temperature | Part Status | Voltage - Supply | Supplier Device Package | Factory Stock | Minimum Quantity | Channel Type | Driven Configuration | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | |
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Renesas Electronics America Inc. | IC DRVR HALF BRDG 100V 8EP-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 9 V ~ 14 V | 8-SOIC-EP | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 0.8V, 2.2V | 2A, 2A | 114V | 10ns, 10ns | |||||
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Renesas Electronics America Inc. | IC DRVR HALF BRDG 100V 8EP-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 9 V ~ 14 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 0.8V, 2.2V | 2A, 2A | 114V | 10ns, 10ns | ||||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRIDGE 100V 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 9 V ~ 14 V | 8-SOIC-EP | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 4V, 7V | 2A, 2A | 114V | 10ns, 10ns | |||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRIDGE 8-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 9 V ~ 14 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 4V, 7V | 2A, 2A | 114V | 10ns, 10ns | ||||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRDG 100V 8EPSOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC-EP | 2500 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 4V, 7V | 2A, 2A | 114V | 10ns, 10ns | |||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||||
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4,083
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | ||||
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7,222
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting, Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | ||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | |||||
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4,306
In-stock
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IXYS Integrated Circuits Division | 2A 8 SOIC EXP METAL DUAL INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||||
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3,668
In-stock
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IXYS Integrated Circuits Division | 2A 8SOIC EXP MTL DUAL IN/NON-INV | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting, Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||||
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IXYS Integrated Circuits Division | 2A 8SOIC EXP MTL DUAL NON INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||||
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IXYS Integrated Circuits Division | 2A 8 SOIC EXP METAL DUAL INVERT | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | |||||
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4,368
In-stock
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IXYS Integrated Circuits Division | 2A 8SOIC EXP MTL DUAL IN/NON-INV | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Inverting, Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | 2000 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | ||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRDG 100V 8EPSOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tape & Reel (TR) | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC-EP | 0 | 2500 | Independent | Half-Bridge | N-Channel MOSFET | 0.8V, 2.2V | 2A, 2A | 114V | 10ns, 10ns | |||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRIDGE 8EPSOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC-EP | 4900 | Independent | Half-Bridge | N-Channel MOSFET | 4V, 7V | 2A, 2A | 114V | 10ns, 10ns | ||||||
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Renesas Electronics America Inc. | IC DRIVER HALF BRDG 100V 8EPSOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 9 V ~ 14 V | 8-SOIC-EP | 0 | Independent | Half-Bridge | N-Channel MOSFET | 0.8V, 2.2V | 2A, 2A | 114V | 10ns, 10ns | ||||||
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-SO | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | - | 7.5ns, 6.5ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL IN/NON 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Inverting, Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | ||||||
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL NONINV 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns | ||||||
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2,442
In-stock
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL ENABLE 8SOIC | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | - | Tube | Non-Inverting | Surface Mount | -55°C ~ 150°C (TJ) | Active | 4.5 V ~ 35 V | 8-SOIC-EP | 0 | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | - | 9ns, 8ns |